Features: Single +3.0V power supplyLow stand-by current 0.3É A (typ.)Directly TTL compatible : All inputs and outputsEasy memory expansion and power down by CS, BC1 & BC2Data hold on +2V power supplyThree-state outputs : OR-tie capabilityOE prevents data contention in the I/O busCommon ...
M5M51016BRT-12VLL-I: Features: Single +3.0V power supplyLow stand-by current 0.3É A (typ.)Directly TTL compatible : All inputs and outputsEasy memory expansion and power down by CS, BC1 & BC2Data hold on +2V ...
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Features: `Low stand-by current 0.3A (typ.)`Directly TTL compatible : All inputs and outputs`Easy ...
Features: Low stand-by current 0.3µA (typ.) Directly TTL compatible : All inputs and output...
Features: Low stand-by current 0.3µA (typ.) Directly TTL compatible : All inputs and output...
Symbol |
Parameter | Conditions |
Ratings |
Unit |
VCC |
Supply voltage | With respect to GND |
0.3 ~ 4.6 |
V |
V I |
Input voltage |
0.3* ~ Vcc + 0.3 |
V | |
VO |
Output voltage |
0 ~ Vcc |
V | |
Pd |
Power dissipation | Ta=25°C |
1 |
W |
Topr |
Operating temperature |
40 ~ 85 |
°C | |
Tstg |
Storage temperature |
65 ~ 150 |
°C |
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
M5M51016BTP, RT are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available.
M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.