M54HCT533

The M54HCT533 is high speed CMOS OCTAL with 3-state outputs fabricated with in silicon gate C2MOS technology.These ICs achive the high speed operation similar to equivalent LSTTL while maintaning the CMOS low power dissipation.

Features of the M54HCT533 are:(1)high speed tPD=17 ns(TYP.) ATVcc=5V;(2)low power dissipation Icc=4A(MAX.) at TA= 25;(3)compatible with TTL outputs VIH=2V (MIN) VIL=0.8V (MAX.);(4)output drive capability 15 lsttl loads;(5)symmetrical output impedance IOL=IOH=6 mA(MIN.);(6)balanced propagation delays tPLH=tPHL;(7)pin and function compatible.

The absolute maximum ratings of the M54HCT533 can be summarized as:(1):the symbol is Vcc,the parameter is supply voltage,the value is -0.5 to +7,the unit is V;(2):the symbol is VI,the parameter is DC input voltage,the value is -0.5 to VCC+0.5,the unit is V;(3):the symbol is Vo,the parameter is DC output voltage,the value is -0.5 to VCC+0.5,the unit is V;(4):the symbol is IIK,the parameter is DC input diode current,the value is ±20,the unit is mA;(5):the symbol is IOK,the parameter is DC output diode current,the value is ±20,the unit is mA;(6):the symbol is IO,the parameter is DC output source sink current per output pin,the value is ±35,the unit is mA;(7):the symbol is Icc or IGND,the parameter is DC VCC or ground current,the value is ±70,the unit is mA;(8):the symbol is PD,the parameter is power dissipation,the value is 500,the unit is mW;(9):the symbol is Tstg,the parameter is storage temperature,the value is -65 to +150,the unit is ;(10):the symbol is TL,the parameter is lead temperature (10 sec),the value is 300,the unit is .