Features: `HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V`LOWPOWER DISSIPATION ICC = 4 A (MAX.) AT 25 `OUTPUT DRIVE CAPABILITY15 LSTTL LOADS `BALANCEDPROPAGATION DELAYS tPLH = tPHL `SYMMETRICAL OUTPUT IMPEDANCE IOL = IOH = 6 mA (MIN.) `COMPATIBLE WITH TTL OUTPUTSVIH = 2V (MIN.) VIL = 0.8V (MAX)` PIN A...
M54HCT125: Features: `HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V`LOWPOWER DISSIPATION ICC = 4 A (MAX.) AT 25 `OUTPUT DRIVE CAPABILITY15 LSTTL LOADS `BALANCEDPROPAGATION DELAYS tPLH = tPHL `SYMMETRICAL OUTPUT I...
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`HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V
`LOWPOWER DISSIPATION ICC = 4 A (MAX.) AT 25
`OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS
`BALANCEDPROPAGATION DELAYS tPLH = tPHL
`SYMMETRICAL OUTPUT IMPEDANCE IOL = IOH = 6 mA (MIN.)
`COMPATIBLE WITH TTL OUTPUTS VIH = 2V (MIN.) VIL = 0.8V (MAX)
` PIN AND FUNCTION COMPATIBLE WITH 54/74LS125/126
Symbol | Parameter | Value | Unit |
VCC | Supply Voltage | -0.5 to +7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 35 | mA |
ICC or IGND | DC VCC or Ground Current | ± 70 | mA |
PD | Power Dissipation | 500 (*) | mW |
Tstg | Storage Temperature | -65 to +150 | |
TL | Lead Temperature (10 sec) | 300 |
The M54/74HCT125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. They have the same high speed performance ofLSTTL combined with trueCMOS low power consumption. These devices rM54/74HCT125/126 equire the same 3-STATE control input G to be taken high to make the output go into the high mpedance state.This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2MOS systems with TTL and NMOS omponents. They are also plug in replacements for LSTTL devices M54/74HCT125/126 giving a reduction of power consumption. All inputs are equipped with protection circuits against static discharge and transient excess voltage.