Features: `HIGH SPEED`tPD = 10 ns (TYP.) AT VCC = 5 V LOWPOWER DISSIPATION`ICC = 1 A (MAX.) AT TA = 25 HIGH NOISE IMMUNITY`VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY`10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE`|IOH| = IOL = 4 mA (MIN.) BALANCEDPROPAGATION DELAYS`tPLH = tPHL WIDE OPERATI...
M54HC4002: Features: `HIGH SPEED`tPD = 10 ns (TYP.) AT VCC = 5 V LOWPOWER DISSIPATION`ICC = 1 A (MAX.) AT TA = 25 HIGH NOISE IMMUNITY`VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY`10 LSTTL LOADS SYMMET...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to +7 |
V |
VI |
DC Input Voltage |
-0.5 to VCC + 0.5 |
V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
±20 |
mA |
IOK |
DC Output Diode Current |
±20 |
mA |
IO |
DC Output Source Sink Current Per Output Pin |
±25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
±50 |
mA |
PD |
Power Dissipation |
500 (*) |
mW |
Tstg |
Storage Temperature |
-65 to +150 |
|
TL |
Lead Temperature (10 sec) |
300 |
AbsoluteMaximumRatings are those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: @ 65 derate to 300mWby 10mW/: 65 to 85
The M54/74HC4002 is a high speed CMOS DUAL 4-INPUT NOR GATE fabricated in silicon gate C2MOS technology.
M54/74HC4002 has the same high speed performance of LSTTL combined with true CMOS low power consumption.The internal circuit is composed of 3 stages including buffer output, which ensures high noise immunity and stable output.
M54/74HC4002 All inputs are equipped with protection circuits against static discharge and transient excess voltage.