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M54HC32

Features: . HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V · LOWPOWER DISSIPATION ICC = 1 mA (MAX.) AT TA = 25 °C· HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.)· OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS · SYMMETRICAL OUTPUT IMPEDANCE \IOH\ = IOL = 4 mA (MIN.) · BALANCEDPROPAGATION DELAYS tPLH = tPHL ...

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SeekIC No. : 004405875 Detail

M54HC32: Features: . HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V · LOWPOWER DISSIPATION ICC = 1 mA (MAX.) AT TA = 25 °C· HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.)· OUTPUT DRIVE CAPABILITY 10 LSTTL LOAD...

M54HC32 Data Sheet

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Part Number:
M54HC32
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

. HIGH SPEED
  tPD = 8 ns (TYP.) AT VCC = 5 V
· LOWPOWER DISSIPATION
  ICC = 1 mA (MAX.) AT TA = 25 °C
·  HIGH NOISE IMMUNITY
   VNIH = VNIL = 28 % VCC (MIN.)
·  OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS
·  SYMMETRICAL OUTPUT IMPEDANCE
  \IOH\ = IOL = 4 mA (MIN.)
· BALANCEDPROPAGATION DELAYS
  tPLH = tPHL
· WIDE OPERATING VOLTAGE RANGE
  VCC (OPR) = 2 V TO 6 V
· PIN AND FUNCTION COMPATIBLE WITH 54/74LS20



Pinout

Connection Diagram


Specifications

Symbol Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7
V
VI DC Input Voltage
-0.5 to VCC + 0.5
V
VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
± 20
mA
IOK DC Output Diode Current
± 20
mA
IO DC Output Source Sink Current Per Output Pin
± 25
mA
ICC or IGND DC VCC or Ground Current
± 50
mA
PD Power Dissipation
500 (*)
mW
Tstg Storage Temperature
-65 to +150
TL Lead Temperature (10 sec)
300

AbsoluteMaximumRatings are those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: @ 65 derate to 300mWby 10mW/: 65to85


Description

The M54/74HC32 is a high speed CMOS 2-INPUT OR GATEfabricated in silicon gate C2MOStechnology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. It achieves thehigh speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 2 stages including buffered output, which gives high noise immunity and a stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.




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