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M54HC10

Features: HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOWPOWER DISSIPATION ICC = 1 mA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCEDPROPAGATION DELAYS tPLH = tPHL WIDE OPERATI...

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SeekIC No. : 004405804 Detail

M54HC10: Features: HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOWPOWER DISSIPATION ICC = 1 mA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMM...

M54HC10 Data Sheet

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Part Number:
M54HC10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

HIGH SPEED
   tPD = 6 ns (TYP.) AT VCC = 5 V
LOWPOWER DISSIPATION
   ICC = 1 mA (MAX.) AT TA = 25 °C
HIGH NOISE IMMUNITY
  VNIH = VNIL = 28 % VCC (MIN.)
OUTPUT DRIVE CAPABILITY
   10 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
    IOH = IOL = 4 mA (MIN.)
BALANCEDPROPAGATION DELAYS
   tPLH = tPHL
WIDE OPERATING VOLTAGE RANGE
   VCC (OPR) = 2 V TO 6 V
PIN AND FUNCTION COMPATIBLE WITH
   54/74LS10


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VCC
 Supply Voltage
-0.5 to +7
V
VI
 DC Input Voltage
-0.5 to VCC + 0.5
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
 DC Input Diode Current
± 20
mA
IOK
 DC Output Diode Current
± 20
mA
IO
 DC Output Source Sink Current Per Output Pin
± 25
mA
ICC or IGND
 DC VCC or Ground Current
± 50
mA
PD
 Power Dissipation
500 (*)
mW
Tstg
 Storage Temperature
-65 to +150
°C
TL
 Lead Temperature (10 sec)
300
°C
AbsoluteMaximumRatings are those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW:  65 derate to 300mWby 10mW/: 65 to85


Description

The M54/74HC10 is a high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

The M54/74HC10has the same high speed performance of LSTTL combined with true CMOS low power consumption.

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.




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