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M54587P

Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (IC(max) = 500mA)` L active level input` With input diode` With clamping diodes` Wide operating temperature range (Ta = 20 to +75°C)ApplicationInterfaces between microcomputers and high-voltage, highcurrent drive systems, drive...

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M54587P: Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (IC(max) = 500mA)` L active level input` With input diode` With clamping diodes` Wide operating temperature range (Ta = 20 to +...

M54587P Data Sheet

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Part Number:
M54587P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` High breakdown voltage (BVCEO 50V)
` High-current driving (IC(max) = 500mA)
`"L" active level input
` With input diode
` With clamping diodes
` Wide operating temperature range (Ta = 20 to +75°C)




Application

Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces




Pinout






Specifications

Symbol
Parameter
Conditions
Ratings
Unit
VCC
 Supply voltage
10
V
VCEO
Collector-emitter voltage Output, H
0.5 ~ +50
V
VI
 Input voltage
0.5 ~ VCC
V
IC
 Collector current Current per circuit output, L
500
mA
IF
 Clamping diode forward current
500
mA
VR
 Clamping diode reverse voltage
50
V
Pd
 Power dissipation Ta = 25°C, when mounted on board
1.79/1.1
W
Topr
 Operating temperature
20 ~ +75
°C
Tstg
 Storage temperature
55 ~ +125
°C





Description

M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.






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