Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (IC(max) = 500mA)` L active level input` With input diode` With clamping diodes` Wide operating temperature range (Ta = 20 to +75°C)ApplicationInterfaces between microcomputers and high-voltage, highcurrent drive systems, drive...
M54587FP: Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (IC(max) = 500mA)` L active level input` With input diode` With clamping diodes` Wide operating temperature range (Ta = 20 to +...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
VCC |
Supply voltage |
10 |
V | ||
VCEO |
Collector-emitter voltage | Output, H |
0.5 ~ +50 |
V | |
VI |
Input voltage |
0.5 ~ VCC |
V | ||
IC |
Collector current | Current per circuit output, L |
500 |
mA | |
IF |
Clamping diode forward current |
500 |
mA | ||
VR |
Clamping diode reverse voltage |
50 |
V | ||
Pd |
Power dissipation | Ta = 25°C, when mounted on board |
1.79/1.1 |
W | |
Topr |
Operating temperature |
20 ~ +75 |
°C | ||
Tstg |
Storage temperature |
55 ~ +125 |
°C |
M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.