Features: `High breakdown voltage (BVCEO 50V)`High-current driving (Ic(max) = 500mA)` With clamping diodes`Driving available with TTL output or with PMOS IC output` Wide operating temperature range (Ta = 20 to +75°C)ApplicationDrives of relays and printers, digit drives of indication elements such...
M54585P: Features: `High breakdown voltage (BVCEO 50V)`High-current driving (Ic(max) = 500mA)` With clamping diodes`Driving available with TTL output or with PMOS IC output` Wide operating temperature range ...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
VCEO |
Collector-emitter voltage | Output, H |
0.5 ~ +50 |
V | |
IC |
Collector current | Current per circuit output, L |
500 |
mA | |
VI |
Input voltage |
0.5 ~ +30 |
V | ||
IF |
Clamping diode forward current |
500 |
mA | ||
VR |
Clamping diode reverse voltage |
50 |
V | ||
Pd |
Power dissipation | Ta = 25°C, when mounted on board |
1.79(P)/1.10(FP) |
W | |
Topr |
Operating temperature |
20 ~ +75 |
°C | ||
Tstg |
Storage temperature |
55 ~ +125 |
°C |
M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.