Features: `Medium breakdown voltage (BVCEO 30V)`Output sink current (IC(max) = 30mA)`Driving available with MOS (PMOS, CMOS) IC output`Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA)`Wide operating temperature range (Ta = 20 to +75°C)ApplicationDriving of digit drives of indication e...
M54577P: Features: `Medium breakdown voltage (BVCEO 30V)`Output sink current (IC(max) = 30mA)`Driving available with MOS (PMOS, CMOS) IC output`Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA)`W...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
VCC |
Supply voltage |
13 |
V | ||
VCEO |
Collector-emitter voltage | Output, H |
0.5 ~+30 |
V | |
IC |
Collector current | Current per circuit output, L |
30 |
A | |
VI |
Input voltage |
20 ~ VCC |
V | ||
Pd |
Power dissipation | Ta = 25°C, when mounted on board |
1.47 |
W | |
Topr |
Operating temperature |
20 ~ +75 |
°C | ||
Tstg |
Storage temperature |
55 ~ +125 |
°C |
M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.