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M54567P

Features: ` High breakdown voltage (BVCEO 50V)`High-current driving (Ic(max) = 1.5A)` With clamping diodes`Driving available with NMOS IC output` Wide operating temperature range (Ta = 20 to +75°C)ApplicationDrives of relays and printers, digit drives of indication elements (LEDs and lamps), and ...

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M54567P: Features: ` High breakdown voltage (BVCEO 50V)`High-current driving (Ic(max) = 1.5A)` With clamping diodes`Driving available with NMOS IC output` Wide operating temperature range (Ta = 20 to +75°C)...

M54567P Data Sheet

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Part Number:
M54567P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` High breakdown voltage (BVCEO 50V)
`High-current driving (Ic(max) = 1.5A)
` With clamping diodes
`Driving available with NMOS IC output
` Wide operating temperature range (Ta = 20 to +75°C)




Application

Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification




Pinout

Connection Diagram




Specifications

Symbol
Parameter
Conditions
Ratings
Unit
VCC
 Supply voltage
10
V
VCEO
Collector-emitter voltage Output, H
0.5 ~+50
V
IC
 Collector current Current per circuit output, L
1.5
A
VI
 Input voltage
0.5 ~ +30
V
VR
 Clamping diode reverse voltage
50
V
IF
 Clamping diode forward current Pulse Width 10ms, Duty Cycle 5%
1.5
A
Pulse Width 100ms, Duty Cycle5%
1.0
Pd
 Power dissipation Ta = 25°C, when mounted on board
1.79(P)/1.10(FP)
W
Topr
 Operating temperature
20 ~ +75
°C
Tstg
 Storage temperature
55 ~ +125
°C





Description

M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.






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