M54563P

Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (Io(max) = 500mA)`With clamping diodes`Driving available with PMOS IC output of 6 ~ 16V or with TTL output` Wide operating temperature range (Ta = 20 to +75°C)`Output current-sourcing typeApplicationDrives of relays, printers, L...

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SeekIC No. : 004405741 Detail

M54563P: Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (Io(max) = 500mA)`With clamping diodes`Driving available with PMOS IC output of 6 ~ 16V or with TTL output` Wide operating tempe...

floor Price/Ceiling Price

Part Number:
M54563P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` High breakdown voltage (BVCEO 50V)
` High-current driving (Io(max) = 500mA)
`With clamping diodes
`Driving available with PMOS IC output of 6 ~ 16V or with TTL output
` Wide operating temperature range (Ta = 20 to +75°C)
`Output current-sourcing type





Application

Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors






Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Conditions
Ratings
Unit
VCEO #
Collector-emitter voltage Output, L
0.5 ~+50
V
VS
Supply voltage
50
W
VI
Input voltage
0.5 ~ +10
V
IO
Output current Current per circuit output, H
500
mA
IF
Clamping diode forward current
500
mA
VR #
Clamping diode reverse voltage
50
V
Pd
Power dissipation Ta = 25°C, when mounted on board
1.79(P)/1.10(FP)
W
Topr
Operating temperature
20 ~ +75
°C
Tstg
Storage temperature
55 ~ +125
°C





Description

M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.






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