M54562P

Features: High breakdown voltage (BVCEO 50V) High-current driving (Io(max) = 500mA) With output clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta = 20 to +75°C) Output current-sourcing typeApplicationDrives of relays, printers,...

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SeekIC No. : 004405739 Detail

M54562P: Features: High breakdown voltage (BVCEO 50V) High-current driving (Io(max) = 500mA) With output clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating tem...

floor Price/Ceiling Price

Part Number:
M54562P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

High breakdown voltage (BVCEO 50V)
High-current driving (Io(max) = 500mA)
With output clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = 20 to +75°C)
Output current-sourcing type





Application

Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors






Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Conditions
Ratings
Unit
VCEO #
Collector-emitter voltage Output, L
0.5 ~ +50
V
VS
Supply Voltage
50
V
VI
Input Voltage
0.5 ~ +30
V
IO
Output Current
Current per circuit output, H
500
mA
IF
Clamping diode forward current
500
mA
VR #
Clamping diode reverse voltage
50
V
PD
Power Dissipation
Ta=25°C Mounted on a board
1.79(P)/1.10(FP)
W
Topr
Operating temperature
20 ~ +75
Tstg
Storage Temperature
55 ~ +125





Description

M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.






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