Features: Á High breakdown voltage (BVCEO 50V)Á High-current driving (Ic(max) = 1.5A)Á With clamping diodesÁ Wide operating temperature range (Ta = 20 to +75°C)ApplicationDrives of relays and printers, digit drives of indication elements(LEDs and lamps), and power ampli...
M54532FP: Features: Á High breakdown voltage (BVCEO 50V)Á High-current driving (Ic(max) = 1.5A)Á With clamping diodesÁ Wide operating temperature range (Ta = 20 to +75°C)Applicatio...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VCEO | Collector-emitter voltage | Output, H |
-0.5to+50 |
V |
Ic | Collector current | Current per circuit output, L |
1.5 |
A |
VI | Input voltage |
-0.5to+10 |
V | |
VR | Clamping diode reverse voltage |
50 |
V | |
IF | Clamping diode forward current | Pulse Width 10ms, Duty Cycle 5% |
1.5 |
A |
Pulse Width 100ms, Duty Cycle 5% |
1.25 | |||
Pd | Power dissipation | Ta = 25°C, when mounted on board |
1.92(P)/1.00(FP) |
W |
Topr | Operating temperature |
20to +75 |
||
Tstg | Storage temperature |
-55to+125 |
M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.