Features: ` High breakdown vo `tage (BVCEO 40V)` High-current driving (Ic(max) = 150mA)` With c `amping diodes` Driving avai `ab `e with PMOS IC output of 8-18V` Wide input vo `tage range (VI = 40 to +40V)` Wide operating temperature range (Ta = 20 to +75°C)ApplicationDrives of relays and printers...
M54527P: Features: ` High breakdown vo `tage (BVCEO 40V)` High-current driving (Ic(max) = 150mA)` With c `amping diodes` Driving avai `ab `e with PMOS IC output of 8-18V` Wide input vo `tage range (VI = 40 t...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VCEO | Collector-emitter voltage | Output, H |
-0.5to+40 |
V |
Ic | Collector current | Current per circuit output, L |
150 |
mA |
VI | Input voltage |
-40to+40 |
V | |
VR | Clamping diode reverse voltage |
150 |
mA | |
IF | Clamping diode forward current |
40
|
V | |
Pd | Power dissipation | Ta = 25°C, when mounted on board |
1.47 |
W |
Topr | Operating temperature |
20to +75 |
||
Tstg | Storage temperature |
-55to+125 |
M54527P is six-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors.Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.