Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (Ic(max) = 500mA)` With clamping diodes`Driving available with PMOS IC output of 8-18V`Wide operating temperature range (Ta = 20 to +75°C)ApplicationDrives of relays and printers, digit drives of indication elements(LEDs and lam...
M54526FP: Features: ` High breakdown voltage (BVCEO 50V)` High-current driving (Ic(max) = 500mA)` With clamping diodes`Driving available with PMOS IC output of 8-18V`Wide operating temperature range (Ta = 20...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VCEO | Clamping-emitter voltage | Ourrent,H |
-0.5TP+50 |
V |
Ic | Collector current | Ourrent per circuit ouptput ,L |
500 |
mA |
VI | Input voltage |
-0.5to+30 |
V | |
IF | Clamping diode forward current |
500 |
mA | |
VR | Clamping diode reverse voltage |
50 |
V | |
Pd | Power dissipation | Ta = 25°C, when mounted on board |
1.47(P)/1.00(FP) |
W |
Topr | Operating temperature |
-20to+75 |
°C | |
Tstg | Storage temperature |
-55to+125 |
M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.