Features: ` High breakdown voltage (BVCEO40V)` High-current driving (Ic(max) = 400mA)` With clamping diodes` Driving available with PMOS IC output` Wide operating temperature range (Ta = 20 to +75°C)ApplicationDrives of relays and printers, digit drives of indication elements(LEDs and lamps), and ...
M54522FP: Features: ` High breakdown voltage (BVCEO40V)` High-current driving (Ic(max) = 400mA)` With clamping diodes` Driving available with PMOS IC output` Wide operating temperature range (Ta = 20 to +75°C...
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Drives of relays and printers, digit drives of indication elements(LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VCEO | Clamping-emitter voltage | Ourrent,H |
-0.5to+40 |
V |
Ic | Collector current | Ourrent per circuit ouptput ,L |
400 |
mA |
VI | Input voltage |
-0.5to+40 |
V | |
IF | Clamping diode forward current |
500 |
mA | |
VR | Clamping diode reverse voltage |
40 |
V | |
Pd | Power dissipation | Ta = 25°C, when mounted on board |
1.79(P)/1.10(FP) |
W |
Topr | Operating temperature |
-20to+75 |
°C | |
Tstg | Storage temperature |
-55to+125 |
M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.