M53230224CE2

Features:

• Part Identification
   - M53230224CE2-C(1024 cycles/16ms Ref, SOJ, Solder)
   - M53230224CJ2-C(1024 cycles/16ms Ref, SOJ, Gold)
• Extended Data Out
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(750mil), double sided component


Specifications

Rating	Symbol	Value	Unit
Voltage on any pin relative to VSS	VIN, VOUT	-1 to +7.0	V
Voltage on VCC supply relative to VSS	VCC	-1 to +7.0	V
Storage Temperature	Tstg	-55 to +150
Power Dissipation	Pd	4	W
Short Circuit Output Current	IOS	50	mA

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional
   operation should be restricted to the conditions as detailed in the operational sections of this
   data  sheet. Exposure to absolute maximum rating conditions for intended periods may affect
   device reliability.


Description

The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230224D is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.