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M4N37

Features: • Current Transfer Ratio - 100% Minimum @ Specified Conditions• Guaranteed Switching Speeds• Meets or Exceeds All JEDEC Registered SpecificationsApplication• General Purpose Switching Circuits• Interfacing and coupling systems of different potentials and imp...

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SeekIC No. : 004405432 Detail

M4N37: Features: • Current Transfer Ratio - 100% Minimum @ Specified Conditions• Guaranteed Switching Speeds• Meets or Exceeds All JEDEC Registered SpecificationsApplication• Genera...

M4N37 Data Sheet

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Part Number:
M4N37
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Current Transfer Ratio - 100% Minimum @ Specified Conditions
• Guaranteed Switching Speeds
• Meets or Exceeds All JEDEC Registered Specifications


Application

• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays


Specifications

Rating
Symbol
Value
Unit
Reverse Voltage
VR
3
Volts
Forward Current - Continuous
IF
60
mA
LED Power Dissipation @ TA = 25
with Negligible Power in Output Detector
Derate above 25°C
PD
100

1.14
mW
mW/
CollectorEmitter Voltage
VCEO
30
Volts
EmitterCollector Voltage
VECO
7
Volts
CollectorBase Voltage
VCBO
70
Volts
Collector Current - Continuous
IC
50
mA
Detector Power Dissipation @ TA = 25
with Negligible Power in Input LED
Derate above 25
PD
150

1.76
mW
mW/
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25
Derate above 25
PD
250
2.94
mW
mW/
Ambient Operating Temperature Range(2)
TA
55 to +100
Storage Temperature Range(2)
Tstg
55 to +150
Soldering Temperature (10 sec, 1/16, from case)
TL
260

1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.


Description

The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.


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