M48Z129V

Features:

` INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY
` AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION
` MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY BACK-UP MODE)
` BATTERY LOW PIN - PROVIDES WARNING OF BATTERY END-OF-LIFE
` WRITE PROTECT VOLTAGES (V<sub>PFD</sub> = Power-fail Deselect Voltage):
   M48Z129Y: 4.2V V<sub>PFD</sub> 4.5V
   M48Z129V: 2.7V V<sub>PFD</sub> 3.0V
` CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
` 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER
` PIN AND FUNCTION COMPATIBLE WITH JEDEC STANDARD 128Kb x 8 SRAMS
` SELF CONTAINED BATTERY IN DIP PACKAGE


Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	0 to 70
TSTG	Storage Temperature (VCC Off)	40 to 70
TBIAS	Temperature Under Bias	10 to 70
TSLD(2)	Lead Solder Temperature for 10 seconds	260
VIO	Input or Output Voltages	0.3 to VCC+0.3	V
VCC	Supply Voltage                   M48Z129Y                                            M48Z129V	0.3 to 7.0 0.3 to 4.6	V

Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause
              permanent damage to the device. This is a stress rating only and functional operation
             of the device at these or any other conditions above those indicated in the operational
             section of this specification is not implied. Exposure to the absolute maximum rating
             conditions for extended periods of time may affect reliability.
         2. Soldering temperature not to exceed 260 for 10 seconds (total thermal budget not to exceed
            150 for longer than 30 seconds).

CAUTION: Negative undershoots below 0.3V are not allowed on any pin while in the Battery Back-up mode.


Description

The M48Z129Y/V ZEROPOWER SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32 pin DIP Module. The
M48Z129Y/V directly replaces industry standard 128K x 8 SRAM. It also provides the non-volatility of FLASH without any requirement for special write timing or limitations on the number of writes that can be performed.

The M48Z129Y/V also has its own Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance condition. When _VCC is out of tolerance, the circuit write protects the SRAM, providing data security in the midst of unpredictable system operation. As V_CC falls, the control circuitry automatically switches to the battery, maintaining data until valid power is restored.