DescriptionThe M48T58Y-70MH1TR is designed as an 8K x 8 non-volatile static RAM and real time clock. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory and real time clock solution.M48T58Y-70MH1TR has ten features. (1)Integrated ultra l...
M48T58Y-70MH1TR: DescriptionThe M48T58Y-70MH1TR is designed as an 8K x 8 non-volatile static RAM and real time clock. The monolithic chip is available in two special packages to provide a highly integrated battery b...
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The M48T58Y-70MH1TR is designed as an 8K x 8 non-volatile static RAM and real time clock. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory and real time clock solution.
M48T58Y-70MH1TR has ten features. (1)Integrated ultra low power SRAM, real time clock, power-fail control circuit and battery. (2)Bytewide RAM-like clock access. (3)BCD coded year, month, day, date, hours, minites and seconds. (4)Frequency tect output for real time clock. (5)Automatic power-fail chip deselect and write protection. (6)Write protect voltages which would be from 4.2V to 4.5V. (7)Its self-contained battery and crystal in the caphat DIP package. (8)Packaging include 28-lead SOIC and SNAPHAT top. (9)SOIC package provides direct connection for a SNAPHAT top which contains the battery and crystal. (10)Pin and function compatible with JEDEC standard 8K x 8 SRAMs. Those are all the main features.
Some absolute maximum ratings of M48T58Y-70MH1TR have been concluded into several points as follow. (1)Its ambient operating temperature range would be from 0°C to 70°C. (2)Its storage temperature (Vcc off, oscillator off) would be from -40°C to 85°C. (3)Its lead solder temperature for 10 seconds would be 260°C. (4)Its input or output voltages would be from -0.3V to 7V. (5)Its supplt voltage would be from -0.3V to 7V. (6)Its output current would be 20mA. (7)Its power dissipation would be 1W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of M48T58Y-70MH1TR are concluded as follow. (1)Its input leakage current would be max +/-1uA. (2)Its output leakage current would be max +/-5uA. (3)Its supplt current would be max 50mA. (4)Its supplt current standby TTL would be max 3mA. (5)Its supply current standby CMOS would be ax 3mA. (6)Its input low voltage would be min -0.3V and max 0.8V. (7)Its input high voltage would be min 2.2V and max Vcc+0.3V. And so on. If you have any question or suggestion or want to know more information about M48T58Y-70MH1TR please contact us for details. Thank you!