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M470T3354CZ0-C(L)E7

Features: • Performance range• JEDEC standard 1.8V ± 0.1V Power Supply• VDDQ = 1.8V ± 0.1V• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin• 4 Banks• Posted CAS• Programmable CASLatenc...

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M470T3354CZ0-C(L)E7: Features: • Performance range• JEDEC standard 1.8V ± 0.1V Power Supply• VDDQ = 1.8V ± 0.1V• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/...

M470T3354CZ0-C(L)E7 Data Sheet

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Part Number:
M470T3354CZ0-C(L)E7
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Features:

• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CASLatency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE 95 °C
   - support High Temperature Self-Refresh rate enable feature
• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS 


Specifications

Symbol Parameter
Rating
Units
Notes
VDD Voltage on VDD pin relative to VSS
- 1.0 V ~ 2.3 V
V
1
VDDQ Voltage on VDDQ pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VDDL Voltage on VDDL pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT Voltage on any pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
TSTG Storage Temperature
-55 to +100
1,2

Note :
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.


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