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M470L3324CU0-C(L)B0

Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)• Differential clock inp...

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SeekIC No. : 004405325 Detail

M470L3324CU0-C(L)B0: Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400• Double-data-rate architecture; two data transfers per clock cyc...

M470L3324CU0-C(L)B0 Data Sheet

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Part Number:
M470L3324CU0-C(L)B0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/17

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Product Details

Description



Features:

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
• SSTL_2 Interface
• 66pin TSOP II Pb-Free package
• RoHS compliant


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.66
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
 1.5 * # of component
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


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