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M470L3224BT0

Features: • Performance range• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Differential clock inputs(CK and CK)• DLL aligns DQ and DQS transition with CK t...

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SeekIC No. : 004405320 Detail

M470L3224BT0: Features: • Performance range• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strob...

M470L3224BT0 Data Sheet

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Part Number:
M470L3224BT0
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/17

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Product Details

Description



Features:

• Performance range
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB :Height 1250 (mil), double sided component


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.66
V
Voltage on VDD supply relative to VSS
VDD
-1.0 ~ 3.6
V
Voltage on VDDQ supply relative to Vss
VDDQ
-0.5 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
8
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The Samsung M470L3224BT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on first gen of 256Mb DDR SDRAM respectively.

The Samsung M470L3224BT0 consists of eight CMOS 16M x 16 bit with 4banks Double Data Rate SDRAMs in 66pin TSOPII(400mil) packages mounted on a 200pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM.

The M470L3224BT0 is Dual In-line Memory Modules and intended for mounting into 200pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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