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M45PE80

Features: ` 8Mbit of Page-Erasable Flash Memory` Page Write (up to 256 Bytes) in 11ms (typical)` Page Program (up to 256 Bytes) in 1.2ms (typical)` Page Erase (256 Bytes) in 10ms (typical)` Sector Erase (512 Kbit)` 2.7 to 3.6V Single Supply Voltage` SPI Bus Compatible Serial Interface` 25MHz Clock...

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SeekIC No. : 004405299 Detail

M45PE80: Features: ` 8Mbit of Page-Erasable Flash Memory` Page Write (up to 256 Bytes) in 11ms (typical)` Page Program (up to 256 Bytes) in 1.2ms (typical)` Page Erase (256 Bytes) in 10ms (typical)` Sector E...

M45PE80 Data Sheet

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Part Number:
M45PE80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` 8Mbit of Page-Erasable Flash Memory
` Page Write (up to 256 Bytes) in 11ms (typical)
` Page Program (up to 256 Bytes) in 1.2ms (typical)
` Page Erase (256 Bytes) in 10ms (typical)
` Sector Erase (512 Kbit)
` 2.7 to 3.6V Single Supply Voltage
` SPI Bus Compatible Serial Interface
` 25MHz Clock Rate (maximum)
` Deep Power-down Mode 1A (typical)
` Electronic Signature
    JEDEC Standard Two-Byte Signature (4014h)
` More than 100,000 Write Cycles
` More than 20 Year Data Retention


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Min.
Max.
Unit
TSTG
 Storage Temperature
-65
150
TLEAD
 Lead Temperature during Soldering
See note 1
VIO
 Input and Output Voltage (with respect to Ground)
-0.6
4.0
V

VCC

 Supply Voltage
-0.6
4.0
V
VESD
 Electrostatic Discharge Voltage (Human Body model)2
-2000
2000
V

Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )




Description

The M45PE80 is a 8Mbit (1M x 8 bit) Serial Paged Flash Memory accessed by a high speed SPIcompatible bus.

The M45PE80 can be written or programmed 1 to  256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

The M45PE80 is organized as 16 sectors, each containing
256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1,048,576 bytes.

The memory can be erased a page at a time, using the Page Erase instruction, or a sector at a time, using the Sector Erase instruction.




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