Features: `2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS`100ns ACCESS TIME (Flash and EEPROM blocks)`WRITE, PROGRAM and ERASE STATUS BITS`CONCURRENT MODE (Read Flash while writing to EEPROM)`100,000 ERASE/WRITE CYCLES`10 YEARS DATA RETENTION`LOW POWER CONSUMPTION Stand-by mod...
M39208: Features: `2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS`100ns ACCESS TIME (Flash and EEPROM blocks)`WRITE, PROGRAM and ERASE STATUS BITS`CONCURRENT MODE (Read Flash while writi...
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Symbol | Parameter |
Value |
Unit |
TA | Ambient Operating Temperature |
40 to 85 |
|
TBIAS | Temperature Under Bias |
50 to 125 |
|
TSTG | Storage temperature |
65 to 150 |
|
VIO(2) | Input or Output Voltages |
0.6 to 5 |
V |
VCC | Supply Voltage |
0.6 to 5 |
V |
VA9,VG,VEF(2) | A9, G, EF Voltage |
0.6 to 13.5 |
V |
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
The M39208 is a memory device combining Flash and EEPROM into a single chip and using single supply voltage. The memory is mapped in two blocks: 2 Mbit of Flash memory and 64 Kbit of EEPROM memory. Each space is independant for writing, in concurrent mode the Flash Memory can be read while the EEPROM is being written.