Position: Home  > All Categories> Integrated Circuits (ICs) > M391T6553BG(Z)0-CD5/CC

M391T6553BG(Z)0-CD5/CC

Features: • JEDEC standard 1.8V ± 0.1V Power Supply• VDDQ = 1.8V ± 0.1V• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin• 4 Bank • Posted CAS• Programmable CAS Latency: 3, 4, 5• Programmable Additive Latency: 0, 1 , 2 , 3 and 4• Write Lat...

product image

M391T6553BG(Z)0-CD5/CC Picture
See larger image
SeekIC No. : 004405147 Detail

M391T6553BG(Z)0-CD5/CC: Features: • JEDEC standard 1.8V ± 0.1V Power Supply• VDDQ = 1.8V ± 0.1V• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin• 4 Bank • Posted CAS• Program...

M391T6553BG(Z)0-CD5/CC Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
M391T6553BG(Z)0-CD5/CC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
• 4 Bank
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refesh Period 7.8us at lower then TCASE 85*C, 3.9us at 85*C < TCASE < 95 *C
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 60ball FBGA - 64Mx8, 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
   Note: For detailed DDR2 SDRAM operation, please refer to Samsung's Device operation & Timing diagram.


Specifications

Symbol Parameter Rating Units Notes
VDD Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1
VDDQ Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1
VDDL Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1
VIN, VOUT Voltage on any pin relative to Vss - 0.5 V ~ 2.3 V V 1
TSTG Storage Temperature -55 to +100 1, 2

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-ability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Prototyping Products
AVT4168
DE1
Discrete Semiconductor Products
T508N12TOF
MUR20040
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more