Features: • Performance range• Burst mode operation• Auto & self refresh capability (8192 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V power supply• MRS cycle with address key programs Latency (Access from column address) Burst lengt...
M390S6450CT1: Features: • Performance range• Burst mode operation• Auto & self refresh capability (8192 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V powe...
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DescriptionSolid-Electrolyte TANTALEX? Capacitors, Military MIL-PRF-39003 Qualified, Styles CSR13,...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss |
VIN, VOUT |
1.0 ~ 4.6 |
V |
Voltage on VDD supply relative to Vss |
VDD,VDDQ |
1.0 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
|
Power dissipation |
PD |
18 |
W |
Short circuit current |
IOS |
50 |
mA |
The Samsung M390S6450CT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450CT1 consists of eighteen CMOS 64Mx4 bit Synchronous DRAMs in TSOP-II 400mil packages, three 18-bits Drive ICs for input control signal, one PLL in 24-pin TSSOP package for clock and one 2K EEPROM in 8-pin TSSOP package for Serial Presence Detect on a 168-pin glass-epoxy substrate. Two 0.22uF and one 0.0022uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M390S6450CT1 is a Dual In-line Memory Module and is intented for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.