M374S6453CTS

Features:

*  Burst mode operation
*  Auto & self refresh capability (8192 Cycles/64ms)
*  LVTTL compatible inputs and outputs
*  Single 3.3V ± 0.3V power supply
*  MRS cycle with address key programs
    Latency (Access from column address)
    Burst length (1, 2, 4, 8 & Full page)
    Data scramble  (Sequential & Interleave)
*  All inputs are sampled at the positive going edge of the  system clock
*  Serial presence detect with EEPROM
*  PCB : Height (1,375mil), double sided component


Specifications

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	VIN, VOUT	-1.0 ~ 4.6	V
Voltage on VDD supply relative to Vss	VDD, VDDQ	-1.0 ~ 4.6	V
Storage temperature	TSTG	-55 ~ +150	0C
Power dissipation	PD	18	W
Short circuit current	IOS	50	mA

Description

The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M374S6453CTS consists of eighteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The M374S6453CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.

Synchronous design M374S6453CTS allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies M374S6453CTS allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.