Features: ` SUPPLY VOLTAGE VDDF = 1.65V to 2.2V VDDS = VDDQF = 2.7V to 3.3V VPPF = 12V for Fast Program (optional)` ACCESS TIME: 70, 85, 100ns` LOW POWER CONSUMPTION` ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M36WT864TF: 8810h Bottom Device Code, M36WT864BF: 8811hSpecifications ...
M36WT864BF: Features: ` SUPPLY VOLTAGE VDDF = 1.65V to 2.2V VDDS = VDDQF = 2.7V to 3.3V VPPF = 12V for Fast Program (optional)` ACCESS TIME: 70, 85, 100ns` LOW POWER CONSUMPTION` ELECTRONIC SIGNATURE Manufactur...
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Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 1...
Symbol |
Parameter |
Value |
Unit | |
Min |
Max | |||
TA |
Ambient Operating Temperature |
-40 |
85 |
°C |
TBIAS |
Temperature Under Bias |
-40 |
125 |
°C |
TSTG |
Storage Temperature |
-65 |
155 |
°C |
VIO |
Input or Output Voltage |
-0.5 |
VDDQF+0.6 |
V |
VDDF |
Supply Voltage |
-0.2 |
2.45 |
V |
VDDQF/VDDS |
Input/Output Supply Voltage |
-0.2 |
3.3 |
V |
VPPF |
Program Voltage |
-0.2 |
14 |
V |
IO |
Output Short Circuit Current |
100 |
mA | |
tVPPFH |
Time for VPPF at VPPFH |
100 |
hours |
The M36WT864 is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank Flash memory and an 8 Mbit SRAM. Recommended operating conditions M36WT864 do not allow both the Flash and the SRAM to be active at the same time.
The memory M36WT864 is offered in a Stacked LFBGA96 (8 x 14mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').