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M36W832TE

Features: SUPPLY VOLTAGE VDDF = 2.7V to 3.3V VDDS = VDDQF = 2.7V to 3.3V VPPF = 12V for Fast Program (optional) ACCESS TIMES: 70ns and 85nsLOW POWER CONSUMPTIONELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M36W832TE: 88BAh Bottom Device Code, M36W832BE: 88BBhPinoutSpecifications...

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SeekIC No. : 004404877 Detail

M36W832TE: Features: SUPPLY VOLTAGE VDDF = 2.7V to 3.3V VDDS = VDDQF = 2.7V to 3.3V VPPF = 12V for Fast Program (optional) ACCESS TIMES: 70ns and 85nsLOW POWER CONSUMPTIONELECTRONIC SIGNATURE Manufacturer Co...

M36W832TE Data Sheet

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Part Number:
M36W832TE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 SUPPLY VOLTAGE
    VDDF = 2.7V to 3.3V
    VDDS = VDDQF = 2.7V to 3.3V
    VPPF = 12V for Fast Program (optional) 
ACCESS TIMES: 70ns and 85ns
 LOW POWER CONSUMPTION
 ELECTRONIC SIGNATURE
    Manufacturer Code: 20h
    Top Device Code, M36W832TE: 88BAh
    Bottom Device Code, M36W832BE: 88BBh


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature (1)
40
85
°C
TBIAS
 Temperature Under Bias
40
125
°C
TSTG
 Storage Temperature
55
150
°C
VIO
 Input or Output Voltage
0.5
VDDQF +0.5
V
VDDF , VDDQF
Flash Supply Voltage
0.6
4.1
V
VPPF
 Program Voltage
0.6
13
V
VDDS
SRAM Supply Voltage
0.5
3.6
V

Note: 1. Depends on range.

 




Description

The M36W832TE is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and an 8 Mbit
SRAM. Recommended operating conditions do not allow both the Flash and the SRAM M36W832TE to be active at the same time.

The memory M36W832TE is offered in a Stacked LFBGA66 (12x8mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').




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