Features: `SUPPLY VOLTAGE VDDF = 2.7V to 3.3V VDDS = VDDQF = 2.7V to 3.3V VPPF = 12V for Fast Program (optional)`ACCESS TIMES: 70ns and 85ns`LOW POWER CONSUMPTION`ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M36W832TE: 88BAh Bottom Device Code, M36W832BE: 88BBhSpecifications S...
M36W832BE: Features: `SUPPLY VOLTAGE VDDF = 2.7V to 3.3V VDDS = VDDQF = 2.7V to 3.3V VPPF = 12V for Fast Program (optional)`ACCESS TIMES: 70ns and 85ns`LOW POWER CONSUMPTION`ELECTRONIC SIGNATURE Manufacturer C...
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Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 1...
Symbol | Parameter |
Value |
Unit | |
Min |
Max | |||
TA TBIAS TSTG VIO VDDF, VDDQF VPPF VDDS |
Ambient Operating Temperature (1) Temperature Under Bias Storage Temperature Input or Output Voltage Flash Supply Voltage Program Voltage SRAM Supply Voltage |
40 40 55 0.5 0.6 0.6 0.5 |
85 125 150 VDDQF +0.5 4.1 13 3.6 |
°C °C °C V V V V |
The M36W832TE is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM M36W832TE to be active at the same time. The memory is offered in a Stacked LFBGA66 (12x8mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').