M36W432TG

Features:

 MULTIPLE MEMORY PRODUCT
32 Mbit (2Mb x 16), Boot Block, Flash Memory
4 Mbit (256Kb x 16) SRAM Memory SUPPLY VOLTAGE
VDDF = 2.7V to 3.3V
VDDS = VDDQF = 2.7V to 3.3V
VPPF = 12V for Fast Program (optional)  ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M36W432TG: 88BAh
Bottom Device Code, M36W432BG: 88BBh


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
TA	Ambient Operating Temperature		-40	85
TBIAS	Temperature Under Bias		-40	125
TSTG	Storage Temperature		-55	150
VIO	Input or Output Voltage		-0.5	VDDQF +0.3	V
VDDF,VDDQF	Flash Supply Voltage		-0.5	3.8	V
VPPF	Program Voltage		-0.6	13	V

VDDS

SRAM Supply Voltage

-0.5

3.8

V

Description

The M36W432TG is a low voltage Multiple Memory Product which combines two memory devices;a 32 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM M36W432TG devices to be active at the same time. The memory is offered in a Stacked LFBGA66 (12x8mm, 8x8 active ball array, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').