M36W416BG

Features:

 MULTIPLE MEMORY PRODUCT
16 Mbit (1Mb x 16) Boot Block Flash Memory
4 Mbit (256Kb x 16) SRAM SUPPLY VOLTAGE
VDDF = VDDS = 2.7V to 3.3V
VDDQF = VDDS = 2.7V to 3.3V
VPPF = 12V for Fast Program (optional)  ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M36W416TG: 88CEh
Bottom Device Code, M36W416BG: 88CFh

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
TA	Ambient Operating Temperature		-40	85
TBIAS	Temperature Under Bias		-40	125
TSTG	Storage Temperature		-55	150
VIO	Input or Output Voltage		-0.5	VDDQF +0.3	V
VDDF,VDDQF	Flash Supply Voltage		-0.5	3.8	V
VPPF	Program Voltage		-0.6	13	V

VDDS

SRAM Supply Voltage

-0.5

3.8

V

Description

The M36W416TG is a low voltage Multiple Memory Product which combines two memory devices;a 16 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions of M36W416TG do not allow both the Flash memory and the SRAM memory to be active at the same time. The memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').