DescriptionThe M36W216TIZA is designed as one kind of 16 Mbit (1Mb x16, boot block) flash memory that combines two memory devices; a 16 Mbit boot block Flash memory and a 2 Mbit SRAM. M36W216TIZA is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with...
M36W216TIZA: DescriptionThe M36W216TIZA is designed as one kind of 16 Mbit (1Mb x16, boot block) flash memory that combines two memory devices; a 16 Mbit boot block Flash memory and a 2 Mbit SRAM. M36W216TIZA is...
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Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 1...
The M36W216TIZA is designed as one kind of 16 Mbit (1Mb x16, boot block) flash memory that combines two memory devices; a 16 Mbit boot block Flash memory and a 2 Mbit SRAM. M36W216TIZA is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased.
Features of the M36W216TIZA are:(1)multiple memory product:16 Mbit (1Mb x 16) boot block flash memory and 2 Mbit (128Kb x 16) SRAM;(2)access time: 70 ns, 85 ns;(3)low power consumption;(4)electronic signature: manufacturer code: 20h, top device code, M36W216TI: 88CEh and bottom device code, M36W216BI: 88CFh;(5)automatic stand-by mode;(6)program and erase suspend;(7)100,000 program/erase cycles per block;(8)common flash interface: 64 bit security code.
The absolute maximum ratings of the M36W216TIZA can be summarized as:(1)Ambient Operating Temperature: -40 to 85 °C;(2)Temperature Under Bias: -40 to 125 °C;(3)Storage Temperature: -55 to 150 °C;(4)Input or Output Voltage: -0.5 to VDDQF+0.5 V;(5)Flash Supply Voltage: -0.5 to 3.8 V;(6)Program Voltage: -0.6 to 13 V;(7)SRAM Supply Voltage: -0.5 to 3.8 V. If you want to know more information about M36W216TIZA, please download the datasheet in www.seekic.com or www.chinaicmart.com .