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M36W216TI

Features: MULTIPLE MEMORY PRODUCT 16 Mbit (1Mb x 16) Boot Block Flash Memory 2 Mbit (128Kb x 16) SRAMSUPPLY VOLTAGE VDDF = VDDS = 2.7V to 3.3V VDDQF = VDDS = 2.7V to 3.3V VPPF = 12V for Fast Program (optional) ACCESS TIME: 70ns, 85nsLOW POWER CONSUMPTIONELECTRONIC SIGNATURE Manufacturer Code: 2...

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SeekIC No. : 004404868 Detail

M36W216TI: Features: MULTIPLE MEMORY PRODUCT 16 Mbit (1Mb x 16) Boot Block Flash Memory 2 Mbit (128Kb x 16) SRAMSUPPLY VOLTAGE VDDF = VDDS = 2.7V to 3.3V VDDQF = VDDS = 2.7V to 3.3V VPPF = 12V for Fast Progr...

M36W216TI Data Sheet

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Part Number:
M36W216TI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 MULTIPLE MEMORY PRODUCT
    16 Mbit (1Mb x 16) Boot Block Flash Memory
    2 Mbit (128Kb x 16) SRAM
 SUPPLY VOLTAGE
   VDDF = VDDS = 2.7V to 3.3V
   VDDQF = VDDS = 2.7V to 3.3V
   VPPF = 12V for Fast Program (optional) 
ACCESS TIME: 70ns, 85ns
 LOW POWER CONSUMPTION
 ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Top Device Code, M36W216TI: 88CEh
   Bottom Device Code, M36W216BI: 88CFh


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
Min
Max
TA
 Ambient Operating Temperature (1)
40
85
°C
TBIAS
 Temperature Under Bias
40
125
°C
TSTG
 Storage Temperature
55
150
°C
VIO
 Input or Output Voltage
0.5
VDDQF +0.5
V
VDDF1 , VDDQF
 Flash Supply Voltage
0.5
3.8
V
VPPF
Program Voltage
0.6
13
V
VDDS
SRAM Supply Voltage
0.5
3.8
V

Note: 1. Depends on range.

 




Description

The M36W216TI is a low voltage Multiple Memory Product which combines two memory devices; a 16 Mbit boot block Flash memory and a 2 Mbit
SRAM. Recommended operating conditions M36W216TI do not allow both the Flash memory and the SRAM memory to be active at the same time.

The memory M36W216TI is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').




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