Position: Home  > All Categories> Integrated Circuits (ICs) > M36W216BI

M36W216BI

Features: MULTIPLE MEMORY PRODUCT 16 Mbit (1Mb x 16) Boot Block Flash Memory 2 Mbit (128Kb x 16) SRAMSUPPLY VOLTAGE VDDF = VDDS = 2.7V to 3.3V VDDQF = VDDS = 2.7V to 3.3V VPPF = 12V for Fast Program (optional) ACCESS TIME: 70ns, 85nsLOW POWER CONSUMPTIONELECTRONIC SIGNATURE Manufacturer Code: 2...

product image

M36W216BI Picture
See larger image
SeekIC No. : 004404867 Detail

M36W216BI: Features: MULTIPLE MEMORY PRODUCT 16 Mbit (1Mb x 16) Boot Block Flash Memory 2 Mbit (128Kb x 16) SRAMSUPPLY VOLTAGE VDDF = VDDS = 2.7V to 3.3V VDDQF = VDDS = 2.7V to 3.3V VPPF = 12V for Fast Progr...

M36W216BI Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
M36W216BI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 MULTIPLE MEMORY PRODUCT
    16 Mbit (1Mb x 16) Boot Block Flash Memory
    2 Mbit (128Kb x 16) SRAM
 SUPPLY VOLTAGE
   VDDF = VDDS = 2.7V to 3.3V
   VDDQF = VDDS = 2.7V to 3.3V
   VPPF = 12V for Fast Program (optional) 
ACCESS TIME: 70ns, 85ns
 LOW POWER CONSUMPTION
 ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Top Device Code, M36W216TI: 88CEh
   Bottom Device Code, M36W216BI: 88CFh


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
Min
Max
TA
 Ambient Operating Temperature (1)
40
85
°C
TBIAS
 Temperature Under Bias
40
125
°C
TSTG
 Storage Temperature
55
150
°C
VIO
 Input or Output Voltage
0.5
VDDQF +0.5
V
VDDF1 , VDDQF
 Flash Supply Voltage
0.5
3.8
V
VPPF
Program Voltage
0.6
13
V
VDDS
SRAM Supply Voltage
0.5
3.8
V

Note: 1. Depends on range.

 




Description

The M36W216TI is a low voltage Multiple Memory Product which combines two memory devices; a 16 Mbit boot block Flash memory and a 2 Mbit
SRAM. Recommended operating conditions M36W216TI do not allow both the Flash memory and the SRAM memory to be active at the same time.

The memory M36W216TI is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Crystals and Oscillators
WT325BI0030.000000
2SB49
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Discrete Semiconductor Products
T508N12TOF
MUR20040
Optical Inspection Equipment
AA924
A21K4B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
View more