Specifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C VID Input or Output Voltage 0.5 to VCC +0.5 V VCCF Flash Chip Supply Voltage 0.6 to 5 V ...
M36W108T: Specifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C ...
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Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 1...
Symbol | Parameter | Value | Unit |
TA | Ambient Operating Temperature (3) | 40 to 85 | °C |
TBIAS | Temperature Under Bias | 50 to 125 | °C |
TSTG | Storage Temperature | 65 to 150 | °C |
VID | Input or Output Voltage | 0.5 to VCC +0.5 | V |
VCCF | Flash Chip Supply Voltage | 0.6 to 5 | V |
VCCS | SRAM Chip Supply Voltage | 0.3 to 4.6 | V |
V(EF, RP) | EF, RP Voltage | 0.6 to 13.5 | V |
PD | Power Dissipation | 0.7 | W |
The M36W108 is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. The M36W108 is offered in the new Chip Scale Package solutions: LBGA48 1.0 mm ball pitch and LGA48 1.0 mm land pitch. The two components, of the package's overall 9 Mbit of memory, are distinguishable by use of the three chip enable lines: EF for the Flash memory, E1S and E2S for the SRAM.
The Flash memory component of M36W108 is identical with the M29W008 device. M36W108 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCCF supply.
For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organization M36W108 allows each block to be erased and reprogrammed without affecting other blocks.
Instructions M36W108 for Read/Reset, Auto Select for reading the Electronic Signature, Programming, Block