Specifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C VIO (2) Input or Output Voltage 0.5 to VCC +0.5 V VCCF Flash Chip Supply Voltage 0.6 to 5...
M36W108AB: Specifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 1...
Symbol | Parameter | Value | Unit |
TA | Ambient Operating Temperature (3) | 40 to 85 | °C |
TBIAS | Temperature Under Bias | 50 to 125 | °C |
TSTG | Storage Temperature | 65 to 150 | °C |
VIO (2) | Input or Output Voltage | 0.5 to VCC +0.5 | V |
VCCF | Flash Chip Supply Voltage | 0.6 to 5 | V |
VCCS | SRAM Chip Supply Voltage | 0.3 to 4.6 | V |
V(EF, RP ) | EF , RP Voltage | 0.6 to 13.5 | V |
PD | Power Dissipation | 0.7 | W |
The M36W108A is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. The M36W108A is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.
The two components, of the package's overall 9 Mbit of memory, are distinguishable by use of the three chip enable lines: EF for the Flash memory, E1S and E2S for the SRAM.
The Flash memory component of M36W108A is identical with the M29W008A device. It is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by- Byte basis using only a single 2.7V to 3.6V VCCF supply. For Program and Erase operations the necessary high voltages are generated internally. The M36W108A can also be programmed in standard programmers. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks.
Instructions for Read/Reset, Auto Select M36W108A for reading the Electronic Signature, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The SRAM component is a low power SRAM that features fully static operation requiring no external clocks or timing strobes, with equal address access and cycle times. M36W108A requires a single 2.7V to 3.6V VCCS supply, and all inputs and outputs are TTL compatible.