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M36W0R6040T0

Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code (Top Flash Configuration), M36W0R6040T0: 8810h Device...

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SeekIC No. : 004404862 Detail

M36W0R6040T0: Features: MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC S...

M36W0R6040T0 Data Sheet

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Part Number:
M36W0R6040T0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

MULTI-CHIP PACKAGE
  1 die of 64 Mbit (4Mb x 16) Flash Memory
  1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
SUPPLY VOLTAGE
  VDDF = VDDP = VDDQ = 1.7V to 1.95V
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
  Manufacturer Code: 20h
  Device Code (Top Flash Configuration), M36W0R6040T0: 8810h
  Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h
PACKAGES
  Compliant with Lead-Free Soldering Processes
  Lead-Free Versions



Specifications

Symbol Parameter Value Unit
     Min      Max
TA Ambient Operating Temperature -30 85 °C
TBIAS Temperature Under Bias -40 125 °C
TSTG Storage Temperature -65 155 °C
TLEAD Lead Temperature during Soldering   (1) °C
VIO Input or Output Voltage -0.5 VDDQ+0.6 V
VDDF Flash Memory Core Supply Voltage -0.2 2.45 V
VDDQ Input/Output Supply Voltage -0.2 2.45 V
VDDP PSRAM Supply Voltage -0.2 3.3 V
VPPF Flash Memory Program Voltage -0.2 14 V
IO Output Short Circuit Current   100 mA
tVPPFH Time for VPPF at VPPFH   100 hours

1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.




Description

The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory of M36W0R6040T0 and M36W0R6040B0 is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package. In addition to the standard version, the packages of M36W0R6040T0 and M36W0R6040B0 are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.

All packages of M36W0R6040T0 and M36W0R6040B0 are compliant with Lead-free soldering processes.




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