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M36DR432B

Features: ` SUPPLY VOLTAGE VDDF = VDDS =1.65V to 2.2V VPPF = 12V for Fast Program (optional)` ACCESS TIME: 100,120ns` LOW POWER CONSUMPTION` ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M36DR432A: 00A0h Bottom Device Code, M36DR432B: 00A1hFLASH MEMORY` 32 Mbit (2Mb x16) BOOT B...

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SeekIC No. : 004404835 Detail

M36DR432B: Features: ` SUPPLY VOLTAGE VDDF = VDDS =1.65V to 2.2V VPPF = 12V for Fast Program (optional)` ACCESS TIME: 100,120ns` LOW POWER CONSUMPTION` ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Devic...

M36DR432B Data Sheet

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Part Number:
M36DR432B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` SUPPLY VOLTAGE
   VDDF = VDDS =1.65V to 2.2V
   VPPF = 12V for Fast Program (optional)
` ACCESS TIME: 100,120ns
` LOW POWER CONSUMPTION
` ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Top Device Code, M36DR432A: 00A0h
   Bottom Device Code, M36DR432B: 00A1h
FLASH MEMORY
` 32 Mbit (2Mb x16) BOOT BLOCK
   Parameter Blocks (Top or Bottom Location)
` PROGRAMMING TIME
   10µs typical
   Double Word Programming Option
` ASYNCRONOUS PAGE MODE READ
   Page width: 4 Word
   Page Mode Access Time: 35ns
` DUAL BANK OPERATION
   Read within one Bank while Program or Erase within the other
   No Delay between Read and Write Operations
` BLOCK PROTECTION ON ALL BLOCKS
   WPF for Block Locking
` COMMON FLASH INTERFACE
   64 bit Security Code
SRAM
` 4 Mbit (256K x 16 bit)
` LOW VDDS DATA RETENTION: 1V
` POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
TA
 Ambient Operating Temperature(3)
40 to 85
TBIAS
 Temperature Under Bias
40 to 125
TSTG
 Storage Temperature
55 to 150
VIO(2)
 Input or Output Voltage
0.2 to VDD(4) + 0.3
V
VDDF
 Flash Chip Supply Voltage
0.5 to 2.7
V
VDDS
 SRAM Chip Supply Voltage
0.2 to 2.6
V
VPPF
 Program Voltage
0.5 to 13.0
V
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table
              "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress
              ratings only and operation of the device at these or any other conditions above those indicated 
              in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating 
              conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics
              SURE Program and other relevant quality documents.
         2. Minimum voltage may undershoot to 2V during transition and for less than 20ns.
         3. Depends on range.
         4. VDD = VDDS = VDDF.


Description

The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

The two components M36DR432 are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S and E2S for the SRAM. The two components M36DR432 are also separately power supplied and grounded.




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