Features: • Performance range Part No. Max Freq. (Speed) M366S3253DTS-L7C/C7C 133MHz (7.5ns@CL=2) M366S3253DTS-L7A/C7A 133MHz (7.5ns@CL=3) M366S3253DTS-L1H/C1H 100MHz (6.0ns@CL=2) M366S3253DTS-L1L/C1L 100MHz (6.0ns@CL=3)• Burst mode opera...
M366S3253DTS: Features: • Performance range Part No. Max Freq. (Speed) M366S3253DTS-L7C/C7C 133MHz (7.5ns@CL=2) M366S3253DTS-L7A/C7A 133MHz (7.5ns@CL=3) M366S3253DTS-L1H/C...
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Features: • Performance range• Burst mode operation• Auto & self refresh cap...
Features: • Performance range• Burst mode operation• Auto & self refresh cap...
Features: • Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms...
• Performance range
Part No. |
Max Freq. (Speed) |
M366S3253DTS-L7C/C7C |
133MHz (7.5ns@CL=2) |
M366S3253DTS-L7A/C7A |
133MHz (7.5ns@CL=3) |
M366S3253DTS-L1H/C1H |
100MHz (6.0ns@CL=2) |
M366S3253DTS-L1L/C1L |
100MHz (6.0ns@CL=3) |
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
Power dissipation |
PD |
1 |
W |
Short circuit current |
IOS |
50 |
mA |
The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs M366S3253DTS in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S325DCTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.
Synchronous M366S3253DTS design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle.Range of operating frequencies, programmable M366S3253DTS latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.