Features: Software Data Protection for lower 128 bytes Two Wire I2C Serial Interface 100kHz Transfer Rates 1.7 to 3.6V Single Supply Voltage: BYTE and PAGE WRITE (up to 16 bytes) RANDOM and SEQUENTIAL READ Modes Self-Timed Programming Cycle Automatic Address Incrementing Enhanced ESD/Latch-Up Pro...
M34E02: Features: Software Data Protection for lower 128 bytes Two Wire I2C Serial Interface 100kHz Transfer Rates 1.7 to 3.6V Single Supply Voltage: BYTE and PAGE WRITE (up to 16 bytes) RANDOM and SEQUENT...
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Symbol | Parameter | Min. | Max. | Unit |
TSTG | Storage Temperature | -65 | 150 | °C |
TLEAD | Lead Temperature during Soldering 1 | See note 1 | °C | |
VIO | Input or Output range E0 Others |
-0.50 -0.50 |
10.0 6.5 |
V |
VCC | Supply Voltage | -0.5 | 6.5 | V |
VESD | Electrostatic Discharge Voltage (Human Body model) 2 | -4000 | -4000 | V |
The M34E02 is a 2 Kbit serial EEPROM memory able to lock permanently the data in its first half (from location 00h to 7Fh). This facility has been designed specifically for use in DRAM DIMMs (dual interline memory modules) with Serial Presence Detect. All the information concerning the DRAM M34E02 module configuration (such as its access speed, its size, its organization) can be kept write protected in the first half of the memory.
This bottom half of the memory area M34E02 can be writeprotected using two different software write protection mechanisms. By sending the device a specific sequence, the first 128 bytes of the memory become write protected: permanently or resetable. In addition, the device allows the entire memory area to be write protected, using the WC input (for example by tieing this input to VCC).
These I2C-compatible electrically erasable programmable memory (EEPROM)M34E02 are organized as 256x8 bits.