M02N60B

The M02N60B is a N Channel MOSFET.

Features of the M02N60B are:(1)Robust High Voltage Temination; (2)Avalanche Energy Specified; (3)Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; (4)Diode is Characterized for Use in Bridge Circurits; (5)IDSS and VDS(on) Specified at Elevated Temperature.

The absolute maximum ratings of the M02N60B can be summarized as:(1)Drain to Current - Continuous:2.0A,Pulsed:9.0A; (2)Gate-to-Source Voltage Continue:+/-20V,Non-repetitive:+/-40V; (3)Total Power DissipationTO-251/252:60W,TO-220:60W; (4)Operating and Storage Temperature Range:-55 to 150; (5)Single Pulse Drain-to-Source Avalanche Energy Tj = 25; (6)(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25):20mJ; (7)Thermal Resistance Junction to Case:1.0/W,Junction to Ambient:62.5/W; (8)Maximum Lead Temperature for Soldering Purposes, 1/8'' form 10 seconds:260.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.