Position: Home  > All Categories> Integrated Circuits (ICs) > LZ1418E100R

LZ1418E100R

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of diss...

product image

LZ1418E100R Picture
See larger image
SeekIC No. : 004403754 Detail

LZ1418E100R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realiz...

LZ1418E100R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LZ1418E100R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.


Application

·Common emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.8 GHz. 




Specifications

SYMBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCER collector-emitter voltage RBE = 220 - 30 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 4 A
Ptot total power dissipation Tmb 75 °C - 45 W
Tstg storage temperature   -65 +200
Tj operating junction temperature   - 200
Tsld operating junction temperature at 0.2 mm from ange;
t 10 s		 - 235



Description

NPN silicon planar epitaxial microwave power transistor LZ1418E100R in a SOT443A metal ceramic flange package with the emitter connected to the flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Discrete Semiconductor Products
T508N12TOF
MUR20040
LED Products
LM24P20
KCG057QV1DB-G770
Cable Assemblies
CS1W-CN114
XW2Z-500T
Switches
US32DMRJ
HBGQ22P-11ET
Cables, Wires
821-0814-a
415-0100-150
View more