LY402

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature Storage Temperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Drain toSourceVoltage 440 Watts 0.38/W 200 -65to150 13.5A 70V 70V 20VDescriptionSilicon VDMOS and...

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SeekIC No. : 004403717 Detail

LY402: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature Storage Temperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Drain toS...

floor Price/Ceiling Price

Part Number:
LY402
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Drain to
Source
Voltage
440 Watts 0.38/W 200 -65to150 13.5A 70V 70V 20V



Description

Silicon VDMOS and LDMOS transistors LY402 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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