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LY402

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature Storage Temperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Drain toSourceVoltage 440 Watts 0.38/W 200 -65to150 13.5A 70V 70V 20VDescriptionSilicon VDMOS and...

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SeekIC No. : 004403717 Detail

LY402: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature Storage Temperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Drain toS...

LY402 Data Sheet

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Part Number:
LY402
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Drain to
Source
Voltage
440 Watts 0.38/W 200 -65to150 13.5A 70V 70V 20V



Description

Silicon VDMOS and LDMOS transistors LY402 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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