Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 120Watts 125/W 200 -65to150 6A 70V 70V 20VDescriptionSilicon VDMOS and LDMOS ...
LX803: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
120Watts | 125/W | 200 | -65to150 | 6A | 70V | 70V | 20V |
Silicon VDMOS and LDMOS transistors LX803 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet" TM process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.