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LX723

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 220 Watts 0.75 /W 200 -65 to 150 22.0A 50V 50V ...

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SeekIC No. : 004403515 Detail

LX723: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

LX723 Data Sheet

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Part Number:
LX723
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
220 Watts
0.75 /W
200
-65 to 150
22.0A
50V
50V
20V



Description

Silicon VDMOS and LDMOS transistors LX723 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet"TM process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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