Position: Home  > All Categories> Integrated Circuits (ICs) > LWE2010S

LWE2010S

Features: · Diffused emitter ballasting resistors providing excellent current sharingand withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geometry gives good...

product image

LWE2010S Picture
See larger image
SeekIC No. : 004403385 Detail

LWE2010S: Features: · Diffused emitter ballasting resistors providing excellent current sharingand withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization reali...

LWE2010S Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LWE2010S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent current sharingand withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Common emitter class A power amplifiers at frequencies up to 2.3 GHz.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE =250W - 20 V
VCEO emitter-base voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC DC collector current (DC)   - 250 mA
Ptot total power dissipation Tmb<= 75 °C - 4.8 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature t £ 10 s; note 1 - 235 °C



Description

LWE2010S,NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Filters
PICO2205A
PICO2204A
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Line Protection, Backups
BX0023
A20B-1008-0550
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more