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LV2327E40R

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellentlifetime· Multicell geometry gives good balance of dis...

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SeekIC No. : 004403086 Detail

LV2327E40R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...

LV2327E40R Data Sheet

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Part Number:
LV2327E40R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellentlifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.
· Input and output matching cell improves the impedances and facilitates the design of wideband circuits.


Application

Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX.
 UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage open base - 15 V
VCBO collector-emitter voltage RBE = 47W - 30 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 2 A
Ptot total power dissipation Tmb £ 75 °C - 18 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature t £ 10 s; note 1 - 235 °C



Description

NPN silicon planar epitaxial microwave power transistor LV2327E40R in a SOT445B metal ceramic flange package, with emitter connected to the flange.


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